Central Semiconductor Corp. Bipolar Transistors - BJT MPSA93

The MPSA93 is a PNP high-voltage bipolar junction transistor designed for general-purpose switching and amplification applications. It comes in a TO-92 package with dimensions of 5.33 mm in overall height and 2.03 mm lead spacing. The device has a collector-base voltage rating of 200 V, a continuous collector current of 500 mA, and a power dissipation of 625 mW at 25°C. The DC current gain (hFE) ranges from 30 to 150 at a collector current of 30 mA and collector-emitter voltage of 10 V. The collector-emitter saturation voltage is 0.4 V max at 20 mA collector and 2 mA base current. The transition frequency is 50 MHz at 10 mA collector current and 20 V collector-emitter voltage. Collector cutoff current is 0.25 µA max at 160 V collector-base voltage. The base-emitter saturation voltage is 0.9 V max under the same bias conditions. Output capacitance is 8.0 pF max.