Central Semiconductor Corp. Bipolar Transistors - BJT MPSA77 TRA

The MPSA77 is a silicon PNP Darlington transistor in a TO-92 package, designed for high-gain applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and an emitter-base voltage of 10 V. The continuous collector current is 500 mA, with a power dissipation of 625 mW and a thermal resistance of 200 °C/W. The operating and storage junction temperature range is -65 to +150 °C. The device features a minimum DC current gain (hFE) of 10,000 at IC = 10 mA and IC = 100 mA, with a collector-emitter saturation voltage of 1.5 V at IC = 100 mA and IB = 0.1 mA. The transition frequency is 125 MHz.