Central Semiconductor Corp. Darlington Transistors MPSA66

The MPSA66 is a silicon PNP Darlington transistor in a TO-92 package, designed for applications requiring high gain. It has a collector-emitter voltage rating of 30 V, a collector-base voltage of 30 V, and an emitter-base voltage of 8.0 V. The continuous collector current is 500 mA, with a power dissipation of 625 mW. Operating and storage junction temperatures range from -65°C to +150°C. The thermal resistance is 200°C/W. Collector-emitter saturation voltage is up to 1.5 V at IC=100 mA and IB=0.1 mA. Current gain (hFE) ranges from 20K to 40K at IC=100 mA. The transition frequency is 100 MHz at VCE=10 V and IC=30 mA.