Central Semiconductor Corp. Bipolar Transistors - BJT MPSA29 TRE

The MPSA29 is an NPN Darlington transistor in a TO-92 package, designed for applications requiring high current gain. It has a collector-base voltage rating of 100 V, a collector-emitter voltage of 100 V, and an emitter-base voltage of 12 V. The continuous collector current is 500 mA, with a power dissipation of 625 mW. The operating and storage junction temperature ranges from -65°C to +150°C. Thermal resistance is 200°C/W from junction to ambient and 83.3°C/W from junction to case. The transistor exhibits a minimum current gain (hFE) of 10,000 at IC=10 mA and IC=100 mA, with a saturated collector-emitter voltage of up to 1.5 V at IC=100 mA. The transition frequency is 125 MHz, and output capacitance is 8.0 pF. The part meets RoHS compliance when ordered with the PBFREE suffix.