Central Semiconductor Corp. Bipolar Transistors - BJT MPSA12 PBFREE

The MPSA12 is a silicon NPN Darlington transistor in a TO-92 package, designed for applications requiring high current gain. It has a collector-emitter voltage rating of 20 V, an emitter-base voltage of 10 V, and a continuous collector current of 500 mA. Power dissipation is rated at 625 mW, with a thermal resistance of 200 °C/W. The operating and storage junction temperature range is -65 to +150 °C. The device meets RoHS specifications as indicated by the PBFREE suffix in the ordering code.