Central Semiconductor Corp. Bipolar Transistors - BJT MPSA06

The MPSA06 is an NPN silicon transistor designed for low power output and medium power driver applications, housed in a TO-92 package. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 500 mA, and a power dissipation of 625 mW. The device exhibits a collector-emitter saturation voltage of 0.25 V at 100 mA collector current and 10 mA base current, with a typical hFE of 100 at 10 mA collector current. The transition frequency is 100 MHz at 10 mA collector current and 2 V collector-emitter voltage. Operating and storage junction temperatures range from -65°C to +150°C.