Central Semiconductor Corp. Single Bipolar Transistors MPSA06 TIN/LEAD

The MPSA06 is a silicon NPN transistor in a TO-92 package for low power output and medium power driver applications. It has a collector-base voltage of 80 V, a collector-emitter voltage of 80 V, a continuous collector current of 500 mA, and a power dissipation of 625 mW. The emitter-base voltage is 4.0 V. The operating and storage junction temperature ranges from -65 °C to +150 °C. The thermal resistance from junction to ambient is 200 °C/W. The current gain (hFE) is a minimum of 100 at 10 mA and 100 mA collector current. The collector-emitter saturation voltage is 0.25 V at 100 mA collector and 10 mA base current. The transition frequency is 100 MHz at 10 mA collector current and 2.0 V collector-emitter voltage.