Central Semiconductor Corp. Bipolar Transistors - BJT MPSA05

Description
Bipolar Transistors - BJT Complementary Trans 60Vcbo 60Vceo 500mA
Description
Bipolar Transistors - BJT Complementary Trans 60Vcbo 60Vceo 500mA
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The MPSA05 is an NPN silicon transistor in a TO-92 package, designed for low power output and medium power driver applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 500 mA. Power dissipation is 625 mW at 25°C ambient temperature. The device features a minimum DC current gain (hFE) of 100 at 10 mA collector current and a transition frequency of 100 MHz. The operating and storage junction temperature range is -65°C to +150°C.

Datasheet Summary
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The MPSA05 is an NPN silicon transistor in a TO-92 package, designed for low power output and medium power driver applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 500 mA. Power dissipation is 625 mW at 25°C ambient temperature. The device features a minimum DC current gain (hFE) of 100 at 10 mA collector current and a transition frequency of 100 MHz. The operating and storage junction temperature range is -65°C to +150°C.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MPSA05
Bipolar Transistors - BJT MPSA05
Bipolar Transistors - BJT Complementary Trans 60Vcbo 60Vceo 500mA

Bipolar Transistors - BJT Complementary Trans 60Vcbo 60Vceo 500mA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MPSA05
Product Name Bipolar Transistors - BJT
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