Central Semiconductor Corp. Bipolar Transistors - BJT MPS8099

The MPS8099 is an NPN silicon transistor in a TO-92 package designed for general purpose audio amplifier applications. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 80 V, a continuous collector current of 500 mA, and a power dissipation of 625 mW. The operating and storage junction temperature range is -65 to +150 °C, with a thermal resistance of 200 °C/W. Current gain (hFE) ranges from 100 to 300 at VCE=5.0 V and IC=1.0 mA, and 75 at IC=100 mA. The transition frequency is 150 MHz, collector-base capacitance is 6.0 pF, and base-emitter capacitance is 60 pF. Emitter-base voltage is 6.0 V. Collector-emitter saturation voltage is 0.3 V at IC=100 mA and IB=10 mA.