Central Semiconductor Corp. Bipolar Transistors - BJT MPS751

The MPS751 is a PNP silicon transistor in a TO-92 package, designed for general purpose amplifier and switching applications requiring high gain at high collector current. It has a collector-base voltage rating of 80 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 2.0 A. Power dissipation is 625 mW at 25°C ambient temperature. The device exhibits a minimum current gain (hFE) of 75 at collector currents up to 1.0 A, dropping to 40 at 2.0 A. The collector-emitter saturation voltage is 0.5 V at IC=2.0A and IB=200mA. Operating and storage junction temperatures range from -65°C to +150°C. The transistor meets RoHS compliance and is marked with its full part number.