Central Semiconductor Corp. Bipolar Transistors - BJT MPS750 APM

The MPS750 is a PNP silicon transistor in a TO-92 package, designed for general-purpose amplifier and switching applications requiring high gain at high collector current. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 40 V, and a continuous collector current of 2.0 A. Power dissipation is 625 mW at 25°C ambient temperature. The device exhibits a minimum current gain (hFE) of 75 at collector currents up to 1.0 A and 40 at 2.0 A. Collector-emitter saturation voltage is 0.5 V at IC=2.0 A and IB=200 mA. The operating and storage junction temperature range is -65°C to +150°C. Thermal resistance is 200°C/W from junction to ambient.