Central Semiconductor Corp. Bipolar Transistors - BJT MPS6566

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Bipolar Transistors - BJT NPN Gen Pur SS
Description
Bipolar Transistors - BJT NPN Gen Pur SS
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NPN bipolar transistor in TO-92 case designed for amplification and switching applications, with a collector-base voltage of 60 V, collector-emitter voltage of 45 V, emitter-base voltage of 4.0 V, and continuous collector current of 10 mA. It has a minimum hFE of 100 at VCE = 10 V and IC = 10 mA, a maximum collector-emitter saturation voltage of 0.40 V at IC = 10 mA, and a transition frequency of 200 MHz. The device has a collector-base capacitance of 3.5 pF.

Datasheet Summary
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NPN bipolar transistor in TO-92 case designed for amplification and switching applications, with a collector-base voltage of 60 V, collector-emitter voltage of 45 V, emitter-base voltage of 4.0 V, and continuous collector current of 10 mA. It has a minimum hFE of 100 at VCE = 10 V and IC = 10 mA, a maximum collector-emitter saturation voltage of 0.40 V at IC = 10 mA, and a transition frequency of 200 MHz. The device has a collector-base capacitance of 3.5 pF.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MPS6566
Bipolar Transistors - BJT MPS6566
Bipolar Transistors - BJT NPN Gen Pur SS

Bipolar Transistors - BJT NPN Gen Pur SS

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MPS6566
Product Name Bipolar Transistors - BJT
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