Central Semiconductor Corp. Bipolar Transistors - BJT MPS6535

The MPS6535 is a PNP silicon transistor in a TO-92 package for general-purpose amplifier applications. It has a collector-emitter voltage rating of 30 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW. The emitter-base voltage is 4.0 V, and the operating and storage junction temperature range is -65°C to +150°C. Current gain (hFE) ranges from 30 to 120 at VCE=1.0 V and IC=100 mA. Collector-emitter saturation voltage is 0.5 V max at IC=100 mA and IB=10 mA, with a base-emitter saturation voltage of 1.2 V max. Transition frequency is 250 MHz typ at VCE=10 V and IC=50 mA. Collector-base cutoff current is 100 nA max at VCB=20 V. Cob is 6.0 pF max at VCB=10 V and IE=0. The part is marked with its full part number and complies with RoHS standards.