Central Semiconductor Corp. Bipolar Transistors - BJT MPS6532

The MPS6532 is an NPN silicon transistor for general-purpose amplifier applications, housed in a TO-92 case. It has a collector-emitter voltage rating of 30 V, a collector-base voltage of 50 V, and a continuous collector current of 600 mA. Power dissipation is rated at 625 mW, with an operating and storage junction temperature range of -65 to +150°C. Current gain (hFE) ranges from 30 to 120 at VCE=1.0V and IC=100mA, and the transition frequency is 300 MHz. Collector-emitter saturation voltage is specified at 0.5 V under IC=100mA and IB=10mA conditions.