Central Semiconductor Corp. Bipolar Transistors - BJT MPS6521

The MPS6521 is an NPN silicon epitaxial transistor in a TO-92 case, designed for low-noise amplifier applications. It has a collector-emitter voltage rating of 25 V, a continuous collector current of 100 mA, and a power dissipation of 625 mW. The transistor exhibits a DC current gain (hFE) ranging from 300 to 600 at a collector current of 2.0 mA and a collector-emitter voltage of 10 V. It offers a transition frequency of 400 MHz at 10 mA and a noise figure of 3.0 dB under specified conditions. The operating and storage junction temperature range is -65°C to +150°C.