Central Semiconductor Corp. Bipolar Transistors - BJT MPS6521 PBFREE

The MPS6521 is an NPN silicon epitaxial transistor in a TO-92 package, designed for low-noise, high-gain amplifier applications. It has a collector-base voltage rating of 40 V, collector-emitter voltage of 25 V, emitter-base voltage of 4.0 V, and continuous collector current of 100 mA with a power dissipation of 625 mW. The device operates over a junction temperature range of -65°C to +150°C. Current gain (hFE) ranges from 300 to 600 at VCE=10 V and IC=2.0 mA. Transition frequency is 400 MHz at VCE=10 V and IC=10 mA. Noise figure is 3.0 dB at VCE=5.0 V, IC=10 μA, and RS=10 kΩ. The PBFREE suffix indicates lead-free plating.