Central Semiconductor Corp. Bipolar Transistors - BJT MPS6520

The MPS6520 is an NPN silicon epitaxial transistor in a TO-92 package, designed for low-noise, high-current-gain amplifier applications. It has a collector-emitter voltage rating of 25 V, a continuous collector current of 100 mA, and a power dissipation of 625 mW. The operating and storage junction temperature range is -65 to +150 °C. Current gain (hFE) ranges from 100 to 400 at VCE=10 V and IC=100 μA, and from 200 to 600 at IC=2.0 mA. The transition frequency is 300 MHz at IC=2.0 mA and 400 MHz at IC=10 mA. Noise figure is 3.0 dB under specified conditions. The device meets standard thermal and electrical performance for general-purpose amplification.