Central Semiconductor Corp. Bipolar Transistors - BJT MPS6519

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Bipolar Transistors - BJT PNP Gen Pur SS
Description
Bipolar Transistors - BJT PNP Gen Pur SS
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The MPS6519 is a PNP silicon small signal transistor in a TO-92 package, designed for general-purpose amplifier applications. It has a collector-emitter voltage rating of 25 V, a collector current of 100 mA, and a power dissipation of 625 mW. The device features a minimum DC current gain (hFE) of 250 at IC=100 mA and VCE=10 V, and a collector-emitter saturation voltage of 0.5 V at IC=50 mA and IB=5 mA. The junction temperature range is -65 to +150°C. The TO-92 package has dimensions of 4.45 to 5.21 mm in body diameter and 12.70 mm in length. The part meets the JEDEC TO-92 case standard.

Datasheet Summary
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The MPS6519 is a PNP silicon small signal transistor in a TO-92 package, designed for general-purpose amplifier applications. It has a collector-emitter voltage rating of 25 V, a collector current of 100 mA, and a power dissipation of 625 mW. The device features a minimum DC current gain (hFE) of 250 at IC=100 mA and VCE=10 V, and a collector-emitter saturation voltage of 0.5 V at IC=50 mA and IB=5 mA. The junction temperature range is -65 to +150°C. The TO-92 package has dimensions of 4.45 to 5.21 mm in body diameter and 12.70 mm in length. The part meets the JEDEC TO-92 case standard.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MPS6519
Bipolar Transistors - BJT MPS6519
Bipolar Transistors - BJT PNP Gen Pur SS

Bipolar Transistors - BJT PNP Gen Pur SS

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MPS6519
Product Name Bipolar Transistors - BJT
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