Central Semiconductor Corp. Bipolar Transistors - BJT MPS6518

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Bipolar Transistors - BJT 40Vcbo 40Vceo 625mW 1.5W 100mA
Description
Bipolar Transistors - BJT 40Vcbo 40Vceo 625mW 1.5W 100mA
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The MPS6518 is a PNP silicon small signal transistor in a TO-92 package, designed for general-purpose amplifier applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, a collector current of 100 mA, and a power dissipation of 625 mW at 25°C. The device operates within a junction temperature range of -65°C to +150°C and has a thermal resistance of 200°C/W. Its hFE ranges from 150 to 300 at VCE=10V and IC=2.0mA, and from 90 to 150 at VCE=10V and IC=100mA. The transistor meets the JEDEC TO-92 case dimensions, with a body diameter of 4.45 to 5.21 mm and a height of 12.70 mm.

Datasheet Summary
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The MPS6518 is a PNP silicon small signal transistor in a TO-92 package, designed for general-purpose amplifier applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, a collector current of 100 mA, and a power dissipation of 625 mW at 25°C. The device operates within a junction temperature range of -65°C to +150°C and has a thermal resistance of 200°C/W. Its hFE ranges from 150 to 300 at VCE=10V and IC=2.0mA, and from 90 to 150 at VCE=10V and IC=100mA. The transistor meets the JEDEC TO-92 case dimensions, with a body diameter of 4.45 to 5.21 mm and a height of 12.70 mm.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MPS6518
Bipolar Transistors - BJT MPS6518
Bipolar Transistors - BJT 40Vcbo 40Vceo 625mW 1.5W 100mA

Bipolar Transistors - BJT 40Vcbo 40Vceo 625mW 1.5W 100mA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MPS6518
Product Name Bipolar Transistors - BJT
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