Central Semiconductor Corp. Bipolar Transistors - BJT MPS6507

Description
Bipolar Transistors - BJT NPN RF OSC 30Vcbo 20Vceo 3.0Vebo 2.0mA
Description
Bipolar Transistors - BJT NPN RF OSC 30Vcbo 20Vceo 3.0Vebo 2.0mA
Datasheet
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MPS6507 is an NPN RF oscillator transistor in a TO-92 case with a collector-base voltage rating of 30 V, a collector-emitter voltage rating of 20 V, and an emitter-base voltage rating of 3.0 V. It has a collector current of 10 mA, a current gain (hFE) minimum of 25 at VCE = 10 V and IC = 10 mA, a collector-emitter saturation voltage of 2.0 V at IC = 10 mA, a collector output capacitance of 2.5 pF, and a transition frequency of 700 MHz. The device is designed for RF oscillator applications.

Datasheet Summary
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MPS6507 is an NPN RF oscillator transistor in a TO-92 case with a collector-base voltage rating of 30 V, a collector-emitter voltage rating of 20 V, and an emitter-base voltage rating of 3.0 V. It has a collector current of 10 mA, a current gain (hFE) minimum of 25 at VCE = 10 V and IC = 10 mA, a collector-emitter saturation voltage of 2.0 V at IC = 10 mA, a collector output capacitance of 2.5 pF, and a transition frequency of 700 MHz. The device is designed for RF oscillator applications.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MPS6507
Bipolar Transistors - BJT MPS6507
Bipolar Transistors - BJT NPN RF OSC 30Vcbo 20Vceo 3.0Vebo 2.0mA

Bipolar Transistors - BJT NPN RF OSC 30Vcbo 20Vceo 3.0Vebo 2.0mA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MPS6507
Product Name Bipolar Transistors - BJT
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