Central Semiconductor Corp. Single Bipolar Transistors MPS650 TIN/LEAD

The MPS650 is an NPN silicon transistor in a TO-92 package designed for general-purpose amplifier and switching applications requiring high gain at high collector current. It has a collector-emitter voltage rating of 40 V, a continuous collector current of 2.0 A, and a power dissipation of 625 mW at 25°C. The device features a minimum current gain (hFE) of 75 at collector currents up to 1.0 A and 40 at 2.0 A. Collector-base breakdown voltage is 60 V, and the emitter-base voltage is 5.0 V. Saturation voltages are 0.3 V at 1.0 A and 0.5 V at 2.0 A. Thermal resistance from junction to ambient is 200 °C/W. The part is RoHS compliant when ordered with the PBFREE suffix, and Tin/Lead plating is available as an option.