Central Semiconductor Corp. Bipolar Transistors - BJT MPS650 H

The MPS650 is an NPN silicon transistor in a TO-92 case, designed for general purpose amplifier and switching applications requiring high gain at high collector current. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 40 V, and a continuous collector current of 2.0 A. Power dissipation is 625 mW at 25°C ambient temperature. The device exhibits a thermal resistance of 200 °C/W, and its junction temperature range is from -65°C to +150°C. Current gain (hFE) is a minimum of 75 at collector currents up to 1.0 A. The transition frequency is 75 MHz at 5.0 V collector-emitter voltage and 50 mA collector current. The part meets RoHS compliance as indicated by optional plating suffixes.