Central Semiconductor Corp. Bipolar Transistors - BJT MPS3392

The CENTRAL SEMICONDUCTOR MPS3392 is a silicon NPN transistor designed for small signal amplifier and low power audio applications. It is packaged in a TO-92 case with a pin configuration of emitter, base, collector. Maximum ratings include a collector-base voltage of 25 V, collector-emitter voltage of 25 V, emitter-base voltage of 5.0 V, continuous collector current of 100 mA, and power dissipation of 625 mW. The junction operating and storage temperature ranges from -65 to +150 °C. The thermal resistance is 200 °C/W. The DC current gain (hFE) at VCE=4.5 V and IC=2.0 mA is specified between 150 and 300. The collector-base capacitance is 3.5 pF at VCB=10 V and f=1.0 MHz. The device is not associated with any stated industry standards or qualifications.