Central Semiconductor Corp. Bipolar Transistors - BJT MPQ6100A

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Bipolar Transistors - BJT . .
Description
Bipolar Transistors - BJT . .
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MPQ6100A is a quad transistor in a TO-116 case (14-pin DIP) containing two NPN 2N2484 and two PNP 2N2907 transistors. It has a maximum power dissipation of 3.0 watts at 25°C. The NPN transistors feature a collector-emitter breakdown voltage of 40 V, a current gain (hFE) of 125 min at 10 mA, and a noise figure of 4.0 dB. The PNP transistors have a collector-emitter breakdown voltage of 40 V and a current gain (hFE) of 50 min at 10 mA. It meets RoHS standards.

Datasheet Summary
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MPQ6100A is a quad transistor in a TO-116 case (14-pin DIP) containing two NPN 2N2484 and two PNP 2N2907 transistors. It has a maximum power dissipation of 3.0 watts at 25°C. The NPN transistors feature a collector-emitter breakdown voltage of 40 V, a current gain (hFE) of 125 min at 10 mA, and a noise figure of 4.0 dB. The PNP transistors have a collector-emitter breakdown voltage of 40 V and a current gain (hFE) of 50 min at 10 mA. It meets RoHS standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MPQ6100A
Bipolar Transistors - BJT MPQ6100A
Bipolar Transistors - BJT . .

Bipolar Transistors - BJT . .

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MPQ6100A
Product Name Bipolar Transistors - BJT
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