Central Semiconductor Corp. Bipolar Transistors - BJT MPQ2907

The MPQ2907 is a PNP silicon quad transistor in a 14-pin DIP package, designed for small signal amplification and switching applications. Each transistor has a collector-base voltage rating of 60 V, collector-emitter voltage of 40 V, and continuous collector current of 600 mA, with a power dissipation of 650 mW per transistor and 2.0 W total. The devices operate across a junction temperature range of -65°C to +150°C. Current gain (hFE) ranges from 75 to 100 at IC=10mA and IC=150mA respectively. Saturation voltage is 0.4 V at IC=150mA and IB=15mA, and 1.6 V at IC=300mA and IB=30mA. Transition frequency is 200 MHz. The package follows the TO-116 mechanical outline with defined pin assignments for all four transistors.