Central Semiconductor Corp. Bipolar Transistors - BJT MM3007

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Bipolar Transistors - BJT NPN 120Vcbo 100Vceo 5.0Vebo 250mA 15pF
Description
Bipolar Transistors - BJT NPN 120Vcbo 100Vceo 5.0Vebo 250mA 15pF
Datasheet
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NPN bipolar transistor for amplification and switching, housed in a TO-39 case, with a collector-emitter voltage of 100 V, collector-base voltage of 120 V, emitter-base voltage of 5.0 V, collector current of 1.0 A, transition frequency of 150 MHz, and collector-emitter saturation voltage of 0.35 V at 1.0 A collector current.

Datasheet Summary
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NPN bipolar transistor for amplification and switching, housed in a TO-39 case, with a collector-emitter voltage of 100 V, collector-base voltage of 120 V, emitter-base voltage of 5.0 V, collector current of 1.0 A, transition frequency of 150 MHz, and collector-emitter saturation voltage of 0.35 V at 1.0 A collector current.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MM3007
Bipolar Transistors - BJT MM3007
Bipolar Transistors - BJT NPN 120Vcbo 100Vceo 5.0Vebo 250mA 15pF

Bipolar Transistors - BJT NPN 120Vcbo 100Vceo 5.0Vebo 250mA 15pF

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MM3007
Product Name Bipolar Transistors - BJT
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