Central Semiconductor Corp. Darlington Transistors MJE801

The MJE801 is a silicon NPN power Darlington transistor in a TO-126 package, designed for audio amplifier applications as a complementary output device. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 4.0 A, and a power dissipation of 40 W. The thermal resistance from junction to case is 3.13 °C/W. The collector-base offset voltage is 60 V, and the emitter-base voltage is 5.0 V. The saturation voltage at 4.0 A collector current and 40 mA base current is 3.0 V, and the base-emitter voltage at 4.0 A is 3.0 V. The DC current gain is 100 at 4.0 A collector current. The operating and storage junction temperature range is from -65 °C to +150 °C.