Central Semiconductor Corp. Bipolar Transistors - BJT MJE15031

The MJE15031 is a PNP silicon power transistor for audio amplifiers, in a TO-220 package with a collector tab. It has a collector-base and collector-emitter voltage rating of 150 V, an emitter-base voltage of 5.0 V, and a continuous collector current of 8.0 A. Peak collector current is 16 A. Power dissipation is 2.0 W at 25°C ambient and 50 W at 25°C case temperature. Thermal resistance from junction to case is 2.5 °C/W. Operating and storage junction temperature ranges from -65 to +150 °C. Current gain (hFE) is 40 at 100 mA to 3.0 A collector current and 20 at 4.0 A. Collector-emitter saturation voltage is 0.5 V at 1.0 A collector and 100 mA base current. Transition frequency is 30 MHz at 10 V and 500 mA.