Central Semiconductor Corp. Single Bipolar Transistors MJE13005 PBFREE

The MJE13005 is an NPN silicon power transistor designed for high-speed switching applications, housed in a TO-220-3 package with dimensions of 14.23 to 15.87 mm in length, 10.01 to 10.60 mm in width, and a tab common to the collector. It has a collector-emitter voltage rating of 400 V, a continuous collector current of 4.0 A, and a peak collector current of 8.0 A. Power dissipation is rated at 75 W with proper heat sinking. The transistor features a transition frequency of 4.0 MHz, a DC current gain (hFE) range of 8 to 60 depending on bias conditions, and a junction temperature range of -65°C to +150°C. Thermal resistance from junction to case is 1.67 °C/W and from junction to ambient is 62.5 °C/W. Switching times under resistive and inductive loads are specified for pulse operation with a duty cycle not exceeding 1.0%.