Central Semiconductor Corp. Bipolar Transistors - BJT MJ2955

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Bipolar Transistors - BJT 100Vcbo 70Vcer 60Vceo 15A 115W
Description
Bipolar Transistors - BJT 100Vcbo 70Vcer 60Vceo 15A 115W
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The MJ2955 is a PNP silicon power transistor in a TO-3 metal case, designed for general purpose switching and amplifier applications. It has a collector-base voltage rating of 100 V, a collector-emitter voltage rating of 70 V, and a continuous collector current of 15 A. The device dissipates up to 115 W with a thermal resistance of 1.52 °C/W. The operating and storage junction temperature range is from -65 °C to +200 °C.

Datasheet Summary
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The MJ2955 is a PNP silicon power transistor in a TO-3 metal case, designed for general purpose switching and amplifier applications. It has a collector-base voltage rating of 100 V, a collector-emitter voltage rating of 70 V, and a continuous collector current of 15 A. The device dissipates up to 115 W with a thermal resistance of 1.52 °C/W. The operating and storage junction temperature range is from -65 °C to +200 °C.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MJ2955
Bipolar Transistors - BJT MJ2955
Bipolar Transistors - BJT 100Vcbo 70Vcer 60Vceo 15A 115W

Bipolar Transistors - BJT 100Vcbo 70Vcer 60Vceo 15A 115W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MJ2955
Product Name Bipolar Transistors - BJT
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