Central Semiconductor Corp. Bipolar Transistors - BJT MJ10012

Description
Bipolar Transistors - BJT 10A 175W 600Vcbo 400Vceo 6A Ic 5.0Vce
Description
Bipolar Transistors - BJT 10A 175W 600Vcbo 400Vceo 6A Ic 5.0Vce
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The MJ10012 is an NPN bipolar transistor in a TO-3 case rated for a collector current of 10 A, power dissipation of 175 W, collector-base voltage of 600 V, and collector-emitter voltage of 400 V. It has a minimum DC current gain of 100 at 6 A collector current and a collector-emitter saturation voltage of 2.5 V at 6 A. The transition frequency is 10 MHz.

Datasheet Summary
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The MJ10012 is an NPN bipolar transistor in a TO-3 case rated for a collector current of 10 A, power dissipation of 175 W, collector-base voltage of 600 V, and collector-emitter voltage of 400 V. It has a minimum DC current gain of 100 at 6 A collector current and a collector-emitter saturation voltage of 2.5 V at 6 A. The transition frequency is 10 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MJ10012
Bipolar Transistors - BJT MJ10012
Bipolar Transistors - BJT 10A 175W 600Vcbo 400Vceo 6A Ic 5.0Vce

Bipolar Transistors - BJT 10A 175W 600Vcbo 400Vceo 6A Ic 5.0Vce

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MJ10012
Product Name Bipolar Transistors - BJT
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