Central Semiconductor Corp. Bipolar Transistors - BJT D44H11

Description
Bipolar Transistors - BJT 80Vceo 5.0Vebo 8.0A 16A Icm 20W
Description
Bipolar Transistors - BJT 80Vceo 5.0Vebo 8.0A 16A Icm 20W
Datasheet
Datasheet Summary
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The D44H11 is a silicon NPN power transistor in a DPAK surface mount package, intended for switching and power amplifier applications. It shares the complementary series ratings: 80 V collector-emitter voltage, 5.0 V emitter-base voltage, 8.0 A continuous collector current, 16 A peak collector current, and 20 W power dissipation at TC=25°C. Thermal resistance is 6.25 °C/W from junction to case and 71.4 °C/W from junction to ambient. Operating and storage junction temperature ranges from -65 °C to +150 °C. The device meets RoHS compliance and is available in lead-free or tin/lead plated variants. The DPAK package has four leads with pinout: base, collector, emitter, collector.

Datasheet Summary
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The D44H11 is a silicon NPN power transistor in a DPAK surface mount package, intended for switching and power amplifier applications. It shares the complementary series ratings: 80 V collector-emitter voltage, 5.0 V emitter-base voltage, 8.0 A continuous collector current, 16 A peak collector current, and 20 W power dissipation at TC=25°C. Thermal resistance is 6.25 °C/W from junction to case and 71.4 °C/W from junction to ambient. Operating and storage junction temperature ranges from -65 °C to +150 °C. The device meets RoHS compliance and is available in lead-free or tin/lead plated variants. The DPAK package has four leads with pinout: base, collector, emitter, collector.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
D44H11
Bipolar Transistors - BJT D44H11
Bipolar Transistors - BJT 80Vceo 5.0Vebo 8.0A 16A Icm 20W

Bipolar Transistors - BJT 80Vceo 5.0Vebo 8.0A 16A Icm 20W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number D44H11
Product Name Bipolar Transistors - BJT
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