Central Semiconductor Corp. Bipolar Transistors - BJT D40C7

The D40C7 is an NPN silicon Darlington power transistor designed for general purpose amplifier applications requiring high gain. It is packaged in a TO-202 case with a thermal resistance of 20 °C/W. Maximum ratings include a collector-emitter voltage of 50 V, continuous collector current of 0.5 A, peak collector current of 1.0 A, and power dissipation of 6.25 W. The operating and storage junction temperature range is -55 °C to +150 °C. Electrical characteristics include a current gain (hFE) of 10,000 to 70,000 at IC=200mA, collector-emitter saturation voltage of 1.5 V at IC=500mA, and transition frequency of 80 MHz. The device has a collector-base capacitance of 10 pF at VCB=10V.