Central Semiconductor Corp. Bipolar Transistors - BJT CZTA96 TR

The CENTRAL SEMICONDUCTOR CZTA96 is a surface mount NPN silicon planar epitaxial transistor designed for extremely high voltage applications, packaged in an SOT-223 case. It has a collector-base voltage rating of 450 V, a collector-emitter voltage rating of 450 V, a continuous collector current of 500 mA, and a power dissipation of 2.0 W. The operating and storage junction temperature range is -65 to +150 °C, with a thermal resistance of 62.5 °C/W. Electrical characteristics include a minimum hFE of 25 at VCE=10V and IC=100mA, and a transition frequency of 20 MHz at IC=10mA. The device features a collector-emitter saturation voltage of up to 0.50 V at IC=50mA and IB=5.0mA. The physical dimensions of the SOT-223 package are defined by the provided mechanical outline with a length of 6.30 to 6.85 mm and a width of 3.30 to 3.70 mm.