Central Semiconductor Corp. Bipolar Transistors - BJT CZTA46 TR

Description
Bipolar Transistors - BJT NPN Extremely High Voltage
Description
Bipolar Transistors - BJT NPN Extremely High Voltage
Datasheet
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The CZTA46 is a surface mount NPN silicon planar epitaxial transistor designed for extremely high voltage applications. It is packaged in an SOT-223 case with dimensions of 6.70 to 7.30 mm in length and 3.30 to 3.70 mm in width. The device has a collector-base and collector-emitter voltage rating of 450 V, a continuous collector current of 500 mA, and a power dissipation of 2.0 W. Its operating and storage junction temperature ranges from -65°C to +150°C, with a thermal resistance of 62.5 °C/W. Current gain (hFE) ranges from 25 to 200 depending on collector current, and the transition frequency is 20 MHz at 10 mA and 10 MHz. The transistor meets no specified industry standards beyond its electrical and thermal ratings.

Datasheet Summary
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The CZTA46 is a surface mount NPN silicon planar epitaxial transistor designed for extremely high voltage applications. It is packaged in an SOT-223 case with dimensions of 6.70 to 7.30 mm in length and 3.30 to 3.70 mm in width. The device has a collector-base and collector-emitter voltage rating of 450 V, a continuous collector current of 500 mA, and a power dissipation of 2.0 W. Its operating and storage junction temperature ranges from -65°C to +150°C, with a thermal resistance of 62.5 °C/W. Current gain (hFE) ranges from 25 to 200 depending on collector current, and the transition frequency is 20 MHz at 10 mA and 10 MHz. The transistor meets no specified industry standards beyond its electrical and thermal ratings.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CZTA46 TR
Bipolar Transistors - BJT CZTA46 TR
Bipolar Transistors - BJT NPN Extremely High Voltage

Bipolar Transistors - BJT NPN Extremely High Voltage

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CZTA46 TR
Product Name Bipolar Transistors - BJT
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