Central Semiconductor Corp. Bipolar Transistors - BJT CZT853 TR

Description
Bipolar Transistors - BJT 200Vcbo 100Vceo 6.0Vebo 6.0A 3.0W
Description
Bipolar Transistors - BJT 200Vcbo 100Vceo 6.0Vebo 6.0A 3.0W
Datasheet
Datasheet Summary
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The CZT853 is an NPN silicon transistor in a SOT-223 package designed for high-current and high-voltage amplifier applications. It has a collector-base voltage rating of 200 V, collector-emitter voltage of 100 V, and continuous collector current of 6.0 A with a power dissipation of 3.0 W. The device operates with a junction temperature range of -65 to +150 °C and has a thermal resistance of 41.7 °C/W. The SOT-223 case dimensions are specified with terminal lengths and body size conforming to the SOT-223 Rev R5 outline. It meets RoHS compliance and is the NPN complement to the CZT953 PNP transistor.

Datasheet Summary
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The CZT853 is an NPN silicon transistor in a SOT-223 package designed for high-current and high-voltage amplifier applications. It has a collector-base voltage rating of 200 V, collector-emitter voltage of 100 V, and continuous collector current of 6.0 A with a power dissipation of 3.0 W. The device operates with a junction temperature range of -65 to +150 °C and has a thermal resistance of 41.7 °C/W. The SOT-223 case dimensions are specified with terminal lengths and body size conforming to the SOT-223 Rev R5 outline. It meets RoHS compliance and is the NPN complement to the CZT953 PNP transistor.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CZT853 TR
Bipolar Transistors - BJT CZT853 TR
Bipolar Transistors - BJT 200Vcbo 100Vceo 6.0Vebo 6.0A 3.0W

Bipolar Transistors - BJT 200Vcbo 100Vceo 6.0Vebo 6.0A 3.0W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CZT853 TR
Product Name Bipolar Transistors - BJT
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