Central Semiconductor Corp. Bipolar Transistors - BJT CZT751 TR

The CZT751 is a PNP silicon transistor in an SOT-223 surface mount package, designed for high current applications. It has a collector-base voltage rating of 80 V, a collector-emitter voltage of 60 V, and an emitter-base voltage of 5.0 V. The device supports a continuous collector current of 2.0 A and a power dissipation of 2.0 W. The thermal resistance is 62.5 °C/W, with an operating and storage junction temperature range from -65 to +150 °C. Current gain (hFE) is 75 at collector currents up to 1.0 A, dropping to 40 at 2.0 A. Saturation voltage is 0.3 V at 1.0 A collector current and 0.5 V at 2.0 A. The transitional frequency is 75 MHz at 50 mA collector current. The SOT-223 package has dimensions of 6.30 to 6.85 mm in length, 2.90 to 3.10 mm in width, and 6.70 to 7.30 mm in lead spacing.