Central Semiconductor Corp. Bipolar Transistors - BJT CZT5551 BK

The CZT5551 is a silicon NPN transistor in an SOT-223 package, designed for high-voltage amplifier applications. It has a collector-base voltage rating of 180 V, a collector-emitter voltage of 160 V, and a continuous collector current of 600 mA. Power dissipation is rated at 2.0 W with a thermal resistance of 62.5 °C/W. The operating and storage junction temperature ranges from -65 °C to +150 °C. Current gain (hFE) ranges from 30 to 250 depending on collector current, and the transition frequency (fT) is 100 to 300 MHz. The device is epoxy molded and features a surface mount configuration with specified mechanical dimensions including a body length of 6.30 to 6.85 mm and height of 1.50 to 1.80 mm. It meets RoHS compliance standards as indicated by the availability of lead-free and tin/lead plating options.