Central Semiconductor Corp. Single Bipolar Transistors CZT5401E BK

The CZT5401E is a PNP silicon transistor in an SOT-223 surface mount package, designed for general purpose amplifier and switching applications requiring high breakdown voltage. It has a collector-emitter voltage rating of 220 V, a continuous collector current of 600 mA, and a power dissipation of 2.0 W. The maximum collector-base voltage is 250 V, with a saturation voltage of 150 mV at 50 mA collector current and a transition frequency of up to 300 MHz. Thermal resistance is 62.5 °C/W, and the operating and storage junction temperature range is -65 °C to +150 °C. The package measures 6.30 mm to 6.85 mm in length, 2.90 mm to 3.10 mm in width, and 3.30 mm to 3.70 mm in lead span. The device is complemented by the CZT5551E NPN transistor.