Central Semiconductor Corp. Bipolar Transistors - BJT CZT31C TR

The CZT31C is an NPN silicon surface mount power transistor in an SOT-223 package, designed for power amplifier applications up to 3.0 amps. It has a maximum collector-emitter voltage of 100 V, continuous collector current of 3.0 A, and power dissipation of 2.0 W at 25°C. The device features a thermal resistance of 62.5 °C/W from junction to ambient and operates from -65°C to +150°C. Electrical characteristics include a saturated collector-emitter voltage of 1.2 V at 3.0 A collector current and DC current gain of 10 to 100 at 3.0 A. The SOT-223 case measures 6.70 to 7.30 mm in length, 3.30 to 3.70 mm in width, and 1.50 to 1.80 mm in body height. The part meets RoHS compliance as implied by its Pb-free plating option designation.