Central Semiconductor Corp. Bipolar Transistors - BJT CZT3150 TR

The CZT3150 is an NPN silicon power transistor in an SOT-223 surface mount package, designed for high current, high gain, and fast switching applications. It has a collector-emitter voltage rating of 25 V, continuous collector current of 5.0 A, and power dissipation of 2.0 W. The device operates with a junction temperature range of -65 to +150 °C and has a thermal resistance of 62.5 °C/W. Electrical characteristics include a DC current gain (hFE) of 250 to 550 at IC=500 mA, and saturation voltages of 0.5 V at IC=3.0 A and 1.10 V at VBE. The transition frequency is 150 MHz. The package dimensions are defined by the SOT-223 mechanical outline.