Central Semiconductor Corp. Bipolar Transistors - BJT CZT3055 TR

The CZT3055 is an NPN silicon power transistor in an SOT-223 package, designed for surface mount power amplifier applications up to 6.0 A. It has a collector-emitter voltage rating of 60 V, a collector-base voltage of 100 V, and a continuous collector current of 6.0 A. Power dissipation is rated at 2.0 W with a thermal resistance of 62.5 °C/W. The operating and storage junction temperature ranges from -65 °C to +150 °C. The transistor exhibits a current gain (hFE) of 5.0 at 6.0 A and 20 to 70 at 4.0 A, with a saturation voltage of 1.1 V at 4.0 A collector current. The part is marked with its full part number and meets no specified external standards beyond its electrical and thermal ratings.