Central Semiconductor Corp. Bipolar Transistors - BJT CZT2680

The CZT2680 is a surface mount NPN high voltage switching power transistor in a SOT-223 package, rated for a collector-emitter voltage of 200 V, continuous collector current of 1.5 A, and power dissipation of 2.0 W. It operates with a junction temperature range of -65 to +150 °C and has a thermal resistance of 62.5 °C/W. Electrical characteristics include a saturation voltage of up to 500 mV at 1.0 A collector current and a current gain (hFE) ranging from 15 to 105 depending on operating conditions. The device meets standard specifications for switching performance with a transition frequency of up to 80 MHz and turn-on/turn-off times of 0.3 µs and 1.0 µs respectively under specified test conditions.