Central Semiconductor Corp. Single Bipolar Transistors CXT5401E TR

The CXT5401E is a PNP silicon transistor in an SOT-89 surface mount package, designed for general purpose amplification and switching applications requiring high breakdown voltage. It has a collector-emitter voltage rating of 220 V, a continuous collector current of 600 mA, and a power dissipation of 1.2 W. The device exhibits a collector-base breakdown voltage of 250 V, a low saturation voltage of 150 mV maximum at 50 mA collector current, and a minimum DC current gain of 75 at 50 mA. Its transition frequency is 100 to 300 MHz, and the junction temperature range is -65°C to +150°C. The part meets no specified industry standards within the provided documentation.