Central Semiconductor Corp. Bipolar Transistors - BJT CXT5401 BK

The CXT5401 is a PNP silicon transistor in an SOT-89 surface-mount package, designed for high-voltage amplifier applications. It has a collector-base voltage rating of 160 V, a collector-emitter voltage of 150 V, and a continuous collector current of 600 mA. The device dissipates up to 1.2 W with a thermal resistance of 104 °C/W. Its operating and storage junction temperature range is -65 to +150 °C. Electrical characteristics include a typical DC current gain (hFE) of 60 to 240 at IC=10 mA, a collector-emitter saturation voltage of 0.5 V at IC=50 mA, and a transition frequency (fT) of 100 to 300 MHz. The marking on the device includes the full part number.