Central Semiconductor Corp. Bipolar Transistors - BJT CXT4033 TR TIN/LEAD

The CXT4033 is a PNP silicon transistor in an SOT-89 surface mount package, designed for high current general purpose amplifier applications. It has a collector-base voltage rating of 80 V, collector-emitter voltage of 80 V, emitter-base voltage of 5.0 V, continuous collector current of 1.0 A, and power dissipation of 1.2 W. The operating and storage junction temperature ranges from -65 °C to +150 °C, with a thermal resistance of 104 °C/W. Current gain (hFE) ranges from 25 to 300 depending on collector current. The collector-emitter saturation voltage is 0.15 V at 150 mA and 0.50 V at 500 mA. The transition frequency is 100 MHz at 50 mA. The device complies with RoHS standards.