Central Semiconductor Corp. Bipolar Transistors - BJT CXT3904 TR TIN/LEAD

Description
Bipolar Transistors - BJT 60Vcbo 40Vceo 6.0Vebo 200mA 1.2W
Description
Bipolar Transistors - BJT 60Vcbo 40Vceo 6.0Vebo 200mA 1.2W
Datasheet
Datasheet Summary
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The CXT3904 is an NPN silicon transistor in an SOT-89 surface mount package, designed for general purpose and switching applications. It has a collector-base voltage rating of 60 V, collector-emitter voltage of 40 V, emitter-base voltage of 6.0 V, and a continuous collector current of 200 mA with a power dissipation of 1.2 W. The operating and storage junction temperature range is -65 to +150 °C, and thermal resistance is 104 °C/W. Current gain (hFE) ranges from 30 to 300 depending on collector current, and transition frequency is 300 MHz at 10 mA. The package has three leads: emitter, collector, and base, with full part number marking.

Datasheet Summary
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The CXT3904 is an NPN silicon transistor in an SOT-89 surface mount package, designed for general purpose and switching applications. It has a collector-base voltage rating of 60 V, collector-emitter voltage of 40 V, emitter-base voltage of 6.0 V, and a continuous collector current of 200 mA with a power dissipation of 1.2 W. The operating and storage junction temperature range is -65 to +150 °C, and thermal resistance is 104 °C/W. Current gain (hFE) ranges from 30 to 300 depending on collector current, and transition frequency is 300 MHz at 10 mA. The package has three leads: emitter, collector, and base, with full part number marking.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CXT3904 TR TIN/LEAD
Bipolar Transistors - BJT CXT3904 TR TIN/LEAD
Bipolar Transistors - BJT 60Vcbo 40Vceo 6.0Vebo 200mA 1.2W

Bipolar Transistors - BJT 60Vcbo 40Vceo 6.0Vebo 200mA 1.2W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CXT3904 TR TIN/LEAD
Product Name Bipolar Transistors - BJT
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