NPN silicon power transistor in SOT-89 surface mount package, rated for a collector-base voltage of 50 V, collector-emitter voltage of 25 V, and continuous collector current of 5.0 A, with a power dissipation of 1.2 W and operating junction temperature range from -65 to +150 °C. Thermal resistance is 104 °C/W. Current gain (hFE) ranges from 50 to 550 depending on operating conditions, with a transition frequency of 150 MHz and collector-off current of 1.0 µA. Part is marked with full part number and complies with RoHS standards.
Bipolar Transistors - BJT NPN 50Vcbo 25Vceo 7.0Vebo 5.0A 1.2W
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | CXT3150 TR |
| Product Name | Bipolar Transistors - BJT |
