Central Semiconductor Corp. MOSFET CXDM4060N TR

The CENTRAL SEMICONDUCTOR CXDM4060N is an N-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It is packaged in an SOT-89 case and rated for a drain-source voltage of 40 V and a continuous drain current of 6.0 A. The device has a typical on-resistance of 20 mΩ at VGS=10 V and a low threshold voltage range of 1.0 to 3.0 V, enabling logic-level compatibility. It supports a maximum pulsed drain current of 20 A for 10 μs pulses and dissipates up to 1.2 W. The operating and storage junction temperature ranges from -55 °C to +150 °C, with a thermal resistance of 104 °C/W. The MOSFET meets RoHS standards and is suitable for load switching, power supply circuits, and battery-powered portable equipment.