Central Semiconductor Corp. MOSFET CXDM1002N TR

The CXDM1002N is a surface-mount, N-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It is packaged in an SOT-89 case and rated for a drain-source voltage of 100 V, a continuous drain current of 2.0 A, and a power dissipation of 1.2 W. The device features a typical on-resistance of 140 mΩ at VGS=4.5 V, a threshold voltage range of 1.5 to 2.5 V, and 2 kV ESD protection. Its operating and storage junction temperature ranges from -55 °C to +150 °C, with a thermal resistance of 104 °C/W. The part is marketed as logic-level compatible and suitable for load/power switches, power supply converters, and battery-powered portable equipment.